Title Nonvolatile memory design : magnetic, resistive, and phase change / Hai Li and Yiran Chen. [O'Reilly electronic resource]

Imprint

To Access:
Available on O'Reilly for Public Libraries

Bookmark link: https://library.naperville-lib.org:444/record=b3158086~S1

QR Code

Description	1 online resource (xiv, 184 pages) : illustrations
Bibliography	Includes bibliographical references.
Contents	1. Introduction to semiconductor memories -- 2. Phase change memory -- 3. Spin-transfer torque RAM -- 4. Resistive random access memory -- 5. Memristors -- 6. The future of nonvolatile memory.
Summary	Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change.
Subject	Semiconductor storage devices.
	Magnetic memory (Computers)
	Flash memories (Computers)
	Change of state (Physics) -- Industrial applications.
	Ordinateurs -- Mémoires à semi-conducteurs.
	Ordinateurs -- Mémoires magnétiques.
	Ordinateurs -- Mémoires flash.
	Changement d'état (Physique) -- Applications industrielles.
	Flash memories (Computers)
	Magnetic memory (Computers)
	Semiconductor storage devices
Added Author	Chen, Yiran, 1976-
Other Form:	Print version: Li, Hai, 1975- Nonvolatile memory design. Boca Raton, FL : Taylor & Francis, ©2012 9781439807453 (DLC) 2011046210 (OCoLC)426810754
ISBN	9781439807460 (electronic bk.)
	1439807469 (electronic bk.)
	1280121599
	9781280121593
	9781138076631 (paperback)
	1138076635
Standard No.	10.1201/b11354 doi

Patron reviews: add a review

You can...

Also...

More Information

Copies