| Description |
1 online resource (xix, 288 pages) : illustrations |
|
data file |
| Bibliography |
Includes bibliographical references. |
| Contents |
1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions. |
| Summary |
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- Provided by publisher |
| Subject |
Metal oxide semiconductor field-effect transistors -- Reliability.
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Integrated circuits -- Fault tolerance.
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Strains and stresses.
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Transistors MOSFET -- Fiabilité. |
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Circuits intégrés -- Tolérance aux fautes. |
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Contraintes (Mécanique) |
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strain. |
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stress. |
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Integrated circuits -- Fault tolerance |
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Strains and stresses |
| Added Author |
Maiti, T. K.
|
| Added Title |
Strain-engineered metal-oxide-semiconductor field-effect transistors |
| Other Form: |
Print version: Maiti, C.K. Strain-engineered MOSFETs. Boca Raton : Taylor & Francis, ©2013 9781466500556 (DLC) 2012031209 (OCoLC)809563361 |
| ISBN |
1466500557 |
|
9781466500556 |
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9781466503472 |
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1466503475 |
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1138075604 |
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9781138075603 |
| Standard No. |
10.1201/9781315216577 doi |
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