| Description |
1 online resource (xvii, 411 pages) : illustrations |
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data file |
| Note |
"A Chapman & Hall book." |
| Bibliography |
Includes bibliographical references and index. |
| Contents |
1. Introduction -- 2. Silicon : the key material for integrated circuit fabrication technology -- 3. Importance of single crystals for integrated circuit fabrication -- 4. Different techniques for growing single-crystal silicon -- 5. From silicon ingots to silicon wafers -- 6. Evaluation of silicon wafers -- 7. Resistivity and impurity concentration mapping of silicon wafers -- 8. Impurities in silicon wafers -- 9. Defects in silicon wafers -- 10. Silicon wafer preparation for VLSI and ULSI processing -- 11. Packing of silicon wafers. |
| Summary |
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. |
| Subject |
Silicon crystals.
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Silicon crystals -- Electric properties.
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Crystal growth.
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Integrated circuits -- Very large scale integration.
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Integrated circuits -- Ultra large scale integration.
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Silicium cristallisé. |
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Cristaux -- Croissance. |
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Circuits intégrés à très grande échelle. |
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Circuits intégrés à ultra-grande échelle. |
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Crystal growth |
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Integrated circuits -- Ultra large scale integration |
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Integrated circuits -- Very large scale integration |
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Silicon crystals |
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Silicon crystals -- Electric properties |
| Other Form: |
Print version: Eranna, G. Crystal growth and evaluation of silicon for VLSI and ULSI. Boca Raton, FL : CRC Press : Taylor & Francis Group, 2015 9781482232813 (OCoLC)902838097 |
| ISBN |
9781482232820 (PDF ebook) |
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1482232820 (PDF ebook) |
|
1482232812 |
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9781482232813 |
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9781322637693 |
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1322637695 |
| Standard No. |
10.1201/b17812 doi |
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