| Description |
1 online resource : illustrations |
| Note |
Title from PDF title page (viewed on Feb. 28, 2013). |
| Bibliography |
Includes bibliographical references and index. |
| Summary |
The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion. |
| Contents |
Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case |
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1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL |
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1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory |
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1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources |
| Subject |
Semiconductor doping.
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Ion implantation.
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Semiconductors -- Heat treatment.
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Semi-conducteurs -- Dopage. |
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Ions -- Implantation. |
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Semi-conducteurs -- Traitement thermique. |
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Ion implantation |
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Semiconductor doping |
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Semiconductors -- Heat treatment |
| Added Author |
Baudrant, Annie.
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| Other Form: |
Print version: Silicon technologies. London : ISTE ; Hoboken, NJ : Wiley, 2011 9781848212312 (DLC) 2011008131 (OCoLC)669751158 |
| ISBN |
9781118601044 (electronic bk.) |
|
1118601041 (electronic bk.) |
|
9781118601112 (electronic bk.) |
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1118601114 (electronic bk.) |
|
9781118601143 |
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1118601149 |
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