| Description |
1 online resource |
| Contents |
Introduction; ; PART I. SILICON CARBIDE (SiC); Bulk Growth of hex-SiC; Industrial Perspectives on hex-SiC Bulk Growth; CVD Epitaxy of hex-SiC; Industrial Perspective on CVD Epitaxy of hex-SiC; Bulk and Epitaxial Growth of c-SiC; Intrinsic Defects in SiC; Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques; Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy; Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC; MOS Gate Oxide Interface Defects in SiC; SiC-Graphene Interfaces; Device Processing Using c-SiC and hex-SiC; Unipolar SiC Devices; Bipolar SiC Devices; Reliability of SiC Devices; Industrial Systems Using SiC Circuits; Hybrid Electric Vehicles and Electric Vehicles Applications of SiC; Novel Applications of SiC in Quantum Information; ; PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3; Ammonothermal and HVPE Bulk Growth of GaN; GaN on Si; HPSG and CVD Growth of Diamond; Diamond Epitaxy and Device Processing; Epitaxial Growth of Beta-Ga2O3; |
| Summary |
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials. |
| Subject |
Wide gap semiconductors.
|
|
Power electronics.
|
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Semi-conducteurs à large bande interdite. |
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Électronique de puissance. |
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Power electronics |
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Wide gap semiconductors |
| Added Author |
Wellmann, Peter, editor.
|
|
Ohtani, Noboru, editor.
|
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Rupp, R. (Roland), editor.
|
| ISBN |
3527824715 |
|
9783527824700 (e-book) |
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3527824707 |
|
9783527824717 (e-book) |
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